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MMIC WPGM0206012M
WAVEPIA
The WPGM0206012M is a 12W Gallium Nitride (GaN) Monolithic Microwave Integrated Circuit (MMIC). Please connect with our sales team for details about MMIC Information.
Frequency (GHz): 0.5 ~ 8.5
Psat (W): 19.5
PAE (%): 22.49
Power Gain (dB): 5.91@4GHz
Operating Voltage (V): 48
Matched TR WP481P06100MH
WAVEPIA
The WP481P06100MH is a 100W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
Description
TheWP481P06100MH is a 100W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
RoHS Certified 11379_624591167.jpg
Features
50 Ω Matched GaN HEMT for 1.03 to 1.09GHz
21.0dB Small Signal Gain
100W Typical P SAT
62% Efficiency at P SAT
48V Operation
Applications
Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
radar Application
Unmatched WP28015015UH(S)
WAVEPIA
The WP28015015UH(S) is a 15W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
Features:
Up to 15GHz Operation
14.0dB Typical Small Signal Gain at 4.7GHz
15W Typical PSAT at 4.7GHz
High Efficiency
Reliability Monitoring Supporting (Optional)
28V Operation
Applications:
U/VHF Amplifier
Broadband Amplifiers
Base Station Communications
Drone, UAV
WiMAX, LTE, WCDMA, GSM
Radar Application
About
WAVEPIA is the market leader in RF & MW IC design. We design and develop various RF solutions based on our proprietary Gallium Nitride (GaN) IC designs. Our products include GaN Bare-dies, unmatched/matched transistors, MMIC PAs, LNAs, FEMs, and more. WAVEPIA is a trusted company, as we hold ISO9001, ISO14001, and AS9100D certifications. Additionally, we have built strong partnerships with the world's leading semiconductor foundries and assembly companies. We are confident that our GaN solutions will deliver significant value to our customers.
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