Digital Directory
Matched TR WP481P06100MH
The WP481P06100MH is a 100W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
Products & Services
MMIC WPGM0206012M
WAVEPIA
The WPGM0206012M is a 12W Gallium Nitride (GaN) Monolithic Microwave Integrated Circuit (MMIC). Please connect with our sales team for details about MMIC Information.
Frequency (GHz): 0.5 ~ 8.5
Psat (W): 19.5
PAE (%): 22.49
Power Gain (dB): 5.91@4GHz
Operating Voltage (V): 48
Unmatched WP28015015UH(S)
WAVEPIA
The WP28015015UH(S) is a 15W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
Features:
Up to 15GHz Operation
14.0dB Typical Small Signal Gain at 4.7GHz
15W Typical PSAT at 4.7GHz
High Efficiency
Reliability Monitoring Supporting (Optional)
28V Operation
Applications:
U/VHF Amplifier
Broadband Amplifiers
Base Station Communications
Drone, UAV
WiMAX, LTE, WCDMA, GSM
Radar Application
Description
The WP481P06100MH is a 100W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
Description
TheWP481P06100MH is a 100W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
RoHS Certified 11379_624591167.jpg
Features
50 Ω Matched GaN HEMT for 1.03 to 1.09GHz
21.0dB Small Signal Gain
100W Typical P SAT
62% Efficiency at P SAT
48V Operation
Applications
Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
radar Application
Description
TheWP481P06100MH is a 100W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
RoHS Certified 11379_624591167.jpg
Features
50 Ω Matched GaN HEMT for 1.03 to 1.09GHz
21.0dB Small Signal Gain
100W Typical P SAT
62% Efficiency at P SAT
48V Operation
Applications
Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
radar Application
