The WP28015015UH(S) is a 15W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). Features: Up to 15GHz Operation 14.0dB Typical Small Signal Gain at 4.7GHz 15W Typical PSAT at 4.7GHz High Efficiency Reliability Monitoring Supporting (Optional) 28V Operation Applications: U/VHF Amplifier Broadband Amplifiers Base Station Communications Drone, UAV WiMAX, LTE, WCDMA, GSM Radar Application

The WP481P06100MH is a 100W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). Description TheWP481P06100MH is a 100W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). RoHS Certified 11379_624591167.jpg Features 50 Ω Matched GaN HEMT for 1.03 to 1.09GHz 21.0dB Small Signal Gain 100W Typical P SAT 62% Efficiency at P SAT 48V Operation Applications Broadband Amplifiers Cellular Infrastructure Test Instrumentation radar Application